On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM‐EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (2), 185-192
- https://doi.org/10.1002/crat.19800150211
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Application of hillock etching of microdefects to the investigation of Czochralski silicon by transmission electron microscopyPhysica Status Solidi (a), 1978
- SEM observation of dislocations in boron implanted silicon using schottky barrier EBIC techniquePhysica Status Solidi (a), 1978
- Investigation of minority-carrier diffusion lengths by electron bombardment of Schottky barriersJournal of Applied Physics, 1978
- Observation of Lattice Defects in Silicon by Scanning Electron Microscopy Utilizing Beam Induced Current Generated in Schottky BarriersJapanese Journal of Applied Physics, 1975
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971
- Plasma effects in semiconductor detectorsNuclear Instruments and Methods, 1967