Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz

Abstract

Accurate modeling and efficient parameter extrac- tion of the small signal equivalent circuit of submicrometer MOS transistors for high-frequency operation are presented. The equivalent circuit is based on a quasi-static approximation which was found to be adequate in the gigahertz range if the extrinsic components are properly modeled. It includes the complete intrin- sic quasi-static MOS model, the series resistances of gate, source, and drain, and a substrate coupling network. Direct extraction is performed by -parameter analysis on the equivalent circuit in the linear and saturation regions of operation. The extracted results are physically meaningful and can be used to "de-embed" the extrinsic effects such as the substrate coupling within the de- vice. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz.