Multiply scanned electron beam annealing of ion implanted indium phosphide

Abstract

A multiply scanned electron beam has been used to anneal ion implanted indium phosphide in the dose range of 5×1012 to 3.6×1014 Se+/cm2. The power density was varied from 8 to 165 W/cm2, and exposure times were in the range 0.5–4.5 s. The best electrical activity for the dose of 5×1012 Se+/cm2 was 9% with a sheet mobility of 1400 cm2/Vs, whereas for a dose of 3.6×1014 Se+/cm2 the electrical activity was 36% with a sheet mobility of 760 cm2/Vs.