Rutherford back-scattering and ellipsometry of selenium implanted InP

Abstract
Good correlation has been found between disorder, measured by Rutherford back-scattering and the extinction coefficient obtained from ellipsometry measurements for 200 keV selenium ions implanted up to a dose of 1*1015 cm-2 at room temperature. Both techniques show that InP becomes amorphous for doses greater than 5*1018 Se+ cm-2. The magnitude of the reflectivity, refractive index and extinction coefficient, obtained from ellipsometry, are presented as a function of dose.