Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAs
- 1 July 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (4), 847-866
- https://doi.org/10.1007/bf02672399
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Photoluminescence of carbon-implanted GaAsApplied Physics Letters, 1981
- Optical and Electrical Characterization of Chemical Defects in GaAs Layers Grown by MBEJournal of the Electrochemical Society, 1981
- On the use of AsH3 in the molecular beam epitaxial growth of GaAsApplied Physics Letters, 1981
- Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopantApplied Physics Letters, 1980
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- High-purity GaAs and Cr-doped GaAs epitaxial layers by MBEJournal of Applied Physics, 1979
- Surface and interface depletion corrections to free carrier-density determinations by hall measurementsSolid-State Electronics, 1979
- Electrical characterization of epitaxial layersThin Solid Films, 1976
- Epitaxy of silicon doped gallium arsenide by molecular beam methodMetallurgical Transactions, 1971
- Hall coefficient factor for polar mode scattering in n-type GaAsJournal of Physics and Chemistry of Solids, 1970