A surface ir study of inorganic film formation GaAs, silicon and germanium by aqueous NH4F, and HF
- 31 December 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 193-194, 371-381
- https://doi.org/10.1016/s0040-6090(05)80047-1
Abstract
No abstract availableKeywords
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