Electronic structure and positron states at vacancies in Si and GaAs
- 15 August 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (4), 2695-2705
- https://doi.org/10.1103/physrevb.34.2695
Abstract
The self-consistent electron structures of the perfect Si and GaAs lattices are calculated by the linear-muffin-tin-orbital (LMTO) band-structure method within the atomic-sphere approximation (ASA). Monovacancies in different charge states are treated by the self-consistent LMTO-ASA Green’s-function method. The corresponding positron states are determined by the same methods and positron annihilation characteristics are calculated. The results are compared with recent experiments.Keywords
This publication has 40 references indexed in Scilit:
- Detection of Ga vacancies in electron irradiated GaAs by positronsApplied Physics Letters, 1986
- Positron study of native vacancies in doped and undoped GaAsJournal of Physics C: Solid State Physics, 1986
- Vacancy recovery and vacancy-hydrogen interaction in niobium and tantalum studied by positronsPhysical Review B, 1985
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985
- Investigation of defects in gallium arsenide using positron annihilationPhysical Review B, 1984
- Computational analysis of positron experimentsJournal of Physics F: Metal Physics, 1984
- Defect spectroscopy with positrons: a general calculational methodJournal of Physics F: Metal Physics, 1983
- Computed positron lifetimes in vacancies and vacancy-iron clusters in goldRadiation Effects, 1983
- Carbon-vacancy interaction in alpha iron: interpretation of positron annihilation resultsJournal of Physics F: Metal Physics, 1982
- Linear methods in band theoryPhysical Review B, 1975