Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy
- 1 May 2006
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 99 (9), 096105
- https://doi.org/10.1063/1.2197059
Abstract
The density of dislocations in n-type GaN was measured by photoelectrochemical etching. A 10× reduction in dislocation density was observed compared to planar GaN grown at the same time. Cross-sectional transmission electron microscopy studies indicate that defect reduction is due to the mutual cancellation of dislocations with equal and opposite Burger’s vectors. The nanoheteroepitaxy sample exhibited significantly higher photoluminescence intensity and higher electron mobility than the planar reference sample.Keywords
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