Electroluminescence from a heterojunction bipolar transistor
- 1 September 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (5), 537-539
- https://doi.org/10.1063/1.95306
Abstract
Electroluminescence has been observed from a GaAlAs/GaAs heterojunction bipolar transistor. The absence of luminescence from the GaAlAs emitter confirms that compositional grading significantly enhances hole confinement. In addition, it is suggested that electroluminescence occurring from the radiative recombination of excess electrons in the base may cause significant cross talk between devices of an integrated circuit.Keywords
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