Photoirradiation Effect on Photoluminescence from Anodized Porous Silicons and Luminescence Mechanism

Publisher Website
Google Scholar
Abstract
The photoirradiation effect on photoluminescence (PL) from anodized porous silicons was studied. Although PL from Si anodized in artificial light decreased with photoirradiation, PL from Si anodized in the dark was found to increase with photoirradiation in air. The main factor for the photoirradiation effect was attributed to oxidation in the surface layer by transmission infrared spectroscopy. During the temporal spectral change in the Si samples anodized in the dark, discrete PL peaks were observed. These PL peaks were excellently modeled by a quantum size effect. The observed blue shift of the PL spectra is interpreted to be due to the reduction of the microparticle size in the topmost amorphous layer with oxidation.