Growth of CuInS2 and its characterization

Abstract

[[abstract]]Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were developed, some of their properties were characterized. CuInS2 single crystals were grown by iodine vapour transport. The habit-planes were determined to be (112) and (110). The lattice parameters were determined to be a = 5.517 Å, c = 11.122 Å (tetragonal). The as-grown crystals were n-type with resistivities in the order of 106 Ω-cm. Eight lattice vibration modes were characterized by Raman Scattering. Single phase CuInS2 thin films were prepaed by RF sputtering The as-deposited films were p-type with resistivities in the range of 10-1 to 101 Ω-cm. Back scattering was used for the film analysis. The feasibility of using flash evaporation to deposit single phase CuInS2 films has also been studied.[[fileno]]2030170010087[[department]]電機工程學