Electrical properties of donor and acceptor implanted Hg1−xCdxTe following cw CO2 laser annealing
- 1 December 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11), 1057-1059
- https://doi.org/10.1063/1.93392
Abstract
The electrical properties of P and B implanted and cw CO2 laser annealed n‐ and p‐type Hg1−x CdxTe (x=0.21, 0.29) are studied. Hall, conductivity, and capacitance‐voltage (C‐V) measurements carried out on the virgin, implanted, and annealed samples all show that both donor and acceptor implants can be electrically activated when annealing with a cw CO2 laser (0.3 s, 250 W/cm2) is employed.Keywords
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