Laser annealing of indium-implanted Pb0.8Sn0.2Te films
- 15 April 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (8), 486-488
- https://doi.org/10.1063/1.90857
Abstract
The annealing of indium‐implanted thin epitaxial films of Pb0.8Sn0.2Te (LTT) by means of pulses from a Q‐switched CO2 laser is reported. The results of the annealing are studied by channeling and interference‐contrast microscopy. The annealing seems to proceed through the melting‐liquid phase recrystallization mechanism which leads to crystals of quality similar to those obtained by conventional furnace annealing. Interference phenomena, related to the fact that the wavelength of the laser radiation is comparable to the film thickness, are observed.Keywords
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