Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures
- 1 July 1990
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 12 (5), 417-422
- https://doi.org/10.1209/0295-5075/12/5/007
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Well width dependence of the carrier life time in InGaAs/InP quantum wellsSuperlattices and Microstructures, 1989
- Growth temperature dependent radiative relaxation in AlGaAs/GaAs multiple quantum wellsApplied Physics Letters, 1989
- Optical investigations on the mobility of two-dimensional excitons in GaAs/As quantum wellsPhysical Review B, 1989
- Radiative recombination in PbTe quantum wellsApplied Physics Letters, 1989
- Two-dimensional exciton transport in GaAs/GaAlAs quantum wellsApplied Physics Letters, 1988
- Observation of free excitons in room-temperature photoluminescence of GaAs/AlGaAs single quantum wellsApplied Physics Letters, 1988
- Linewidth Dependence of Radiative Exciton Lifetimes in Quantum WellsPhysical Review Letters, 1988
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987
- Band-Gap Engineering: From Physics and Materials to New Semiconductor DevicesScience, 1987
- Free excitons in room-temperature photoluminescence of GaAs-multiple quantum wellsPhysical Review B, 1983