Reply to "Electronic structure of oxygen in gallium phosphide"
- 15 November 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (10), 6107-6109
- https://doi.org/10.1103/physrevb.28.6107
Abstract
Experiment is the ultimate test of any theory. If a theory fails in this test, it must be modified or replaced by another which succeeds. Existing defect theories as applied to oxygen in GaP do fail to describe reality, while the new weak-bonding model succeeds. Presumed inconsistencies noted by Jaros and Dean in their preceding Comment are shown to be unrelated to the essential properties of the new model and are due to an incomplete understanding of still-developing interpretation.Keywords
This publication has 4 references indexed in Scilit:
- Electronic structure of oxygen in gallium phosphidePhysical Review B, 1983
- Ab initiotreatment of silicon defect clusters. The unrelaxed, neutral monovacancyPhysical Review B, 1982
- Electronic States of Oxygen in Gallium Phosphide, an Example of Weak BondingPhysical Review Letters, 1982
- Optical transitions via the deep O donor in GaP. II. Temperature dependence of cross sectionsPhysical Review B, 1978