Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. II
- 1 June 1966
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 21 (6), 1040-1045
- https://doi.org/10.1143/jpsj.21.1040
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Nuclear Magnetic Resonance Studies of the Metallic Transition in Doped SiliconPhysical Review B, 1964
- Effect of Doping on the Electron Spin Resonanceain Phosphorus Doped Silicon Studied at Liquid Nitrogen TemperatureJournal of the Physics Society Japan, 1964
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped SiliconJournal of the Physics Society Japan, 1964
- Electron Spin Resonance on Interacting Donors in SiliconPhysical Review B, 1964
- g Factors and Spin-Lattice Relaxation of Conduction ElectronsPublished by Elsevier ,1963
- Electron Spin Resonance in SemiconductorsPublished by Elsevier ,1962
- Low-temperature hall coefficient and conductivity in heavily doped siliconJournal of Physics and Chemistry of Solids, 1960
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some SemiconductorsPhysical Review B, 1954
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954