Relaxation effects on the (110) surface of GaAs
- 15 November 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (10), 4724-4726
- https://doi.org/10.1103/physrevb.14.4724
Abstract
A commonly assumed model for the relaxed GaAs (110) surface is considered. This model can account for the insensitivity of the empty cation-derived surface states to metal overlayers, and the lack of evidence for occupied anion surface states in recent photoemission measurements. With relaxation of the surface, we find that the empty cation-derived surface band becomes more dispersive. The center of mass lies above the conduction-band minimum; however, the threshold of the surface band remains within the bulk band gap.Keywords
This publication has 26 references indexed in Scilit:
- (110) surface states in III-V and II-VI zinc-blende semiconductorsPhysical Review B, 1976
- Surface states of GaAs (110): Pseudopotential calculationsSolid State Communications, 1975
- Relation of Schottky Barriers to Empty Surface States on III-V SemiconductorsPhysical Review Letters, 1975
- Selection-Rule Effects in Electron-Loss Spectroscopy of Ge and GaAs SurfacesPhysical Review Letters, 1975
- Surface states of the (110) surface of GaAsJournal of Physics C: Solid State Physics, 1975
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Intrinsic surface states of (110) surfaces of group IV and III-V semiconductorsPhysical Review B, 1974
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971