High-resolution scanning electron-beam annealing of ion-implanted silicon

Abstract

A commercial scanning electron microscope, modified for high‐current operation, has been successfully used to anneal silicon layers driven amorphous by high doses of implanted arsenic. Selected‐area electron channeling patterns indicate complete recrystallization of the implanted layer with substrate orientation. Spreading‐resistance measurements reveal complete electrical activation of the implanted arsenic with no dopant redistribution. The potential for localized annealing through a focused scanning electron beam is illustrated by the fabrication of submicron islands of recrystallized silicon surrounded by amorphous silicon of very high resistivity.