The incorporation of Ga during LPE growth of In0.53Ga0.47As on (111)B and (100) InP substrates

Abstract

We report the temperature dependence of the incorporation of Ga during LPE growth of In_0.53Ga_0.47As on (111) B‐ and (100) ‐oriented InP substrates. The distribution coefficients of Ga can be accurately represented by K^Ga_(111)B =6.40×10⁻⁶ exp(1.10/kT) and K^Ga₍₁₀₀₎=5.02×10⁻¹³ exp(2.37/kT), which are equal at 629 °C. The difference in activation energies is the source of the ’’discrepancy’’ reported by Pearsall etal. that K^Ga_(111)B<K^Ga₍₁₀₀₎ at 621 °C while from our results K^Ga_(111)B≳K^Ga₍₁₀₀₎ at 650 °C.