Structure and bonding at the CaF2/Si (111) interface
- 3 March 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (9), 596-598
- https://doi.org/10.1063/1.96478
Abstract
High resolution core level spectroscopy with synchrotron radiation is used to determine the bonding at the epitaxial CaF2/Si (111) interface. It is found that both Ca and F bond to Si at the interface inducing core level shifts of +0.4 eV and −0.8 eV, respectively. Structural models with an atomically sharp interface are proposed where Ca bonds to the first layer Si and F to the second layer.Keywords
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