Bound Exciton–Neutral Acceptor Complex in ZnTe
- 1 May 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 75 (1), 341-346
- https://doi.org/10.1002/pssb.2220750137
Abstract
The splitting of I1 (2.3758 eV) and I2 (2.3590 eV) lines observed in luminescence at liquid helium temperature due to uniaxial stress is investigated. The I1 line splits into three components, all of them allowed for both polarizations. The I2 line splits into two components, one allowed for ℰ⟂p and the second allowed for both polarizations. The I1 and I2 lines are interpreted as due to radiative annihilation of excitons bound to neutral acceptor and donor, respectively.This publication has 6 references indexed in Scilit:
- Luminescence Due to Oxygen and Self-Activated Centers in Zinc TellurideJournal of the Physics Society Japan, 1972
- Stress‐induced splitting of excitons due to exchange interaction in zinc telluridePhysica Status Solidi (b), 1972
- Effects of Uniaxial Strain on Band-Edge Optical Transitions in a Direct Zinc-Blende-Structure SemiconductorPhysical Review B, 1970
- The effect of doubly ionizable vacancy acceptors on the conductivity of donor doped semiconducting compounds with special reference to CdTe and ZnTeJournal of Physics and Chemistry of Solids, 1965
- Carrier Mobility and Shallow Impurity States in ZnSe and ZnTePhysical Review B, 1963
- Experimental Proof of the Existence of a New Electronic Complex in SiliconPhysical Review Letters, 1960