Initial stages of native oxide growth on hydrogen passivated Si(111) surfaces studied by scanning tunneling microscopy
- 16 March 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (11), 1307-1309
- https://doi.org/10.1063/1.107325
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Step-flow mechanism versus pit corrosion: scanning-tunneling microscopy observations on wet etching of Si(111) by HF solutionsChemical Physics Letters, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- Chemically etched silicon surfaces viewed at the atomic level by force microscopyJournal of the American Chemical Society, 1991
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen PeroxideJapanese Journal of Applied Physics, 1990
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Control factor of native oxide growth on silicon in air or in ultrapure waterApplied Physics Letters, 1989
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989
- Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysisSurface Science, 1983
- Oxidation of etched silicon in air at room temperature; Measurements with ultrasoft X-ray photoelectron spectroscopy (ESCA) and neutron activation analysisSurface Science, 1983