Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (7), 585-587
- https://doi.org/10.1109/68.87921
Abstract
In situ laser-monitored reactive ion etching is used to control ridge formation with 150-AA accuracy in fabricating double heterostructure InGaAs-GaAs strained layer single-quantum-well ridge waveguide lasers grown by molecular-beam epitaxy. Continuous-wave threshold current as low as 3.6 mA was obtained on devices with cleaved mirrors. High-reflectivity (96-70%) coated devices have the lowest threshold current at 2.1 mA.Keywords
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