Ridge waveguide injection laser with a GaInAs strained-layer quantum well (λ=1 μm)
- 23 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (12), 714-716
- https://doi.org/10.1063/1.98076
Abstract
Ridge waveguide lasers emitting near 1 μm have been made on a GaAs substrate using a single GaInAs strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. The epitaxial layers were grown by low-pressure metalorganic chemical vapor deposition, and the ridge waveguide was fabricated by chemically assisted ion beam etching. The lasers have threshold currents near 17 mA with fundamental lateral mode operation to five times this value. These are the first reported strained-layer current-injection lasers to run cw at room temperature; they operate, without bonding, to greater than 24 mW/facet (100 mA dc), and have 18 mW/facet (80 mA dc) lifetimes in excess of 144 h.Keywords
This publication has 7 references indexed in Scilit:
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Lasing transitions in GaAs/GaAs1−xPx strained-layer superlattices with x=0.1–0.5Applied Physics Letters, 1985
- Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasersJournal of Applied Physics, 1985
- Strained-layer quantum-well injection laserApplied Physics Letters, 1984
- Stimulated emission in strained-layer quantum-well heterostructuresJournal of Applied Physics, 1983
- Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eVJournal of Applied Physics, 1974
- Refractive index of AlxGa1−xAs between 1.2 and 1.8 eVApplied Physics Letters, 1974