Competitive rate of energy loss mechanisms evidenced in high-field electron drift velocity in Si at 30 °K
- 1 June 1969
- journal article
- Published by Springer Nature in Lettere al Nuovo Cimento (1971-1985)
- Vol. 1 (18), 946-951
- https://doi.org/10.1007/bf02752519
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Anisotropy of high-field electron transport phenomena in siliconIl Nuovo Cimento B (1971-1996), 1968
- Hot-electron variable effective-mass in silieonIl Nuovo Cimento B (1971-1996), 1968
- Hot-electron drift mobility in silicon between 77 °K and 300 °KIl Nuovo Cimento B (1971-1996), 1968
- Warm-Electron Effects in-Type Silicon and GermaniumPhysical Review B, 1967
- Influence of high uniaxial stress on warm electron effects in siliconSolid State Communications, 1965
- Piezowiderstand von n‐Silizium in Abhängigkeit von der elektrischen FeldstärkePhysica Status Solidi (b), 1965
- Piezoresistance and Piezo-Hall-Effect in-Type SiliconPhysical Review B, 1963
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Two-Phonon Indirect Transitions and Lattice Scattering in SiPhysical Review B, 1960
- Ionized-Impurity Scattering Mobility of Electrons in SiliconPhysical Review B, 1959