Influence of high uniaxial stress on warm electron effects in silicon
- 31 October 1965
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 3 (10), 311-314
- https://doi.org/10.1016/0038-1098(65)90084-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The influence of high uniaxial stress on the indirect absorption edge in siliconSolid State Communications, 1965
- Method for Measuring Small Nonlinearities of Electric CharacteristicsReview of Scientific Instruments, 1965
- Cyclotron Resonance in Uniaxially Stressed Silicon. II. Nature of the Covalent BondPhysical Review B, 1965
- High-Stress Piezoresistance and Mobility in Degenerate Sb-Doped GermaniumPhysical Review B, 1965
- Conductivity anisotropy of warm and hot electrons in silicon and germaniumSolid State Communications, 1963
- Piezoresistance and Piezo-Hall-Effect in-Type SiliconPhysical Review B, 1963
- Distribution Functions for Hot Electrons in Many-Valley SemiconductorsPhysical Review B, 1961
- Scattering of Conduction Electrons by Lattice Vibrations in SiliconPhysical Review B, 1960
- Scattering of Electrons by Lattice Vibrations in Nonpolar CrystalsPhysical Review B, 1956
- Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic ScatteringPhysical Review B, 1956