Mechanisms of chemical vapor deposition of silicon
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 82-89
- https://doi.org/10.1016/0022-0248(78)90418-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Anisotropy in the growth rates of silicon deposited by reduction of silicon tetrachlorideJournal of Crystal Growth, 1975
- The chemistry and transport phenomena of chemical vapor deposition of silicon from SiCl4Journal of Crystal Growth, 1975
- Inelastic light scattering studies of silicon chemical vapor deposition (CVD) systemsJournal of Crystal Growth, 1975
- Chemical Processes in Vapor Deposition of Silicon: I . Deposition from and Etching byJournal of the Electrochemical Society, 1975
- Chemical Processes in Vapor Deposition of Silicon: II . Deposition from andJournal of the Electrochemical Society, 1975
- Abnormal Impurity Distributions in High‐Purity Epitaxial Silicon LayersJournal of the Electrochemical Society, 1975
- Perfect Crystal Growth of Silicon by Vapor DepositionJournal of the Electrochemical Society, 1975
- Defect-free nucleation of silicon on {111} silicon surfacesJournal of Crystal Growth, 1974
- Silicon epitaxial growthJournal of Crystal Growth, 1972
- Layer growth in silicon epitaxyJournal of Crystal Growth, 1972