73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 13 (5), 259-261
- https://doi.org/10.1109/55.145046
Abstract
The authors report a thermal-cycle emitter process using phosphorus for the fabrication of self-aligned SiGe-base heterojunction bipolar transistors. The low thermal cycle results in extremely, narrow basewidths and preservation of lightly doped spacers in both the emitter-base and base-collector junctions for improved breakdown. Transistors with 35-nm basewidths were obtained with low emitter-base reverse leakage and a peak cutoff frequency of 73 GHz for an intrinsic base sheet resistance of 16 k Omega / Square Operator . Minimum NTL (nonthreshold logic) and ECL (emitter-coupled logic) gate delays of 28 and 34 ps, respectively were obtained with these devices.<>Keywords
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