Growth kinetics and step density in reflection high-energy electron diffraction during molecular-beam epitaxy
- 1 April 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (7), 2272-2283
- https://doi.org/10.1063/1.341041
Abstract
The kinetics of molecular‐beam epitaxy are examined by means of Monte Carlo simulations in combination with a new approach for monitoring surface growth, i.e., by calculating the evolution of the surface step density. The evolution of the step density is shown to have a remarkable correspondence to that of the measured reflection high‐energy electron diffraction (RHEED) specular spot intensities for III‐V semiconductor compounds. We study growth in a variety of systems, including flat and stepped surfaces, as a function of substrate temperature and draw several conclusions concerning the relation between RHEED measurements, kinetics, and growth quality. The range of validity of the kinematic approach to RHEED is discussed and the importance of multiple scattering in the high step density regime is highlighted.Keywords
This publication has 18 references indexed in Scilit:
- Epitaxial growth quality optimization by supercomputerApplied Physics Letters, 1987
- Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling ApproachPhysical Review Letters, 1987
- Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxySuperlattices and Microstructures, 1986
- A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam EpitaxyPhysical Review Letters, 1986
- RHEED studies of heterojunction and quantum well formation during MBE growth — from multiple scattering to band offsetsSurface Science, 1986
- Monolayer and multilayer growth of Cu on the Ru(0001) surfaceSurface Science, 1986
- Dynamics of Crystal GrowthAdvances in Chemical Physics, 1979
- Enhanced elastic modulus in composition-modulated gold-nickel and copper-palladium foilsJournal of Applied Physics, 1977
- Analytical theory of crystal growthThe Journal of Chemical Physics, 1976