High-field electron velocities in silicon surface inversion layers
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3), 267-272
- https://doi.org/10.1016/0039-6028(82)90597-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- Measurement of the high-field drift velocity of electrons in inversion layers on siliconIEEE Electron Device Letters, 1981
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- Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunctionJapanese Journal of Applied Physics, 1974
- Charge transfer in overlapping gate charge-coupled devicesIEEE Journal of Solid-State Circuits, 1973
- Drift-Velocity Saturation of Holes in Si Inversion LayersJournal of the Physics Society Japan, 1971
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970
- Electron drift velocity in avalanching silicon diodesIEEE Transactions on Electron Devices, 1967
- Measurement of high-field carrier drift velocities in silicon by a time-of-flight techniqueIEEE Transactions on Electron Devices, 1967