Red Photoluminescent Efficiency and Minority-Carrier Lifetime of GaP(Zn,O) Pulled from Nonstoichiometric Melts
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10), 394-397
- https://doi.org/10.1063/1.1653744
Abstract
GaP (Zn, O) crystals pulled from nonstoichiometric melts by the liquid‐encapsulation Czochralski (LEC) technique bridge the gap between the red photoluminescent quantum efficiencies of platelets grown from solution and crystals pulled by LEC from a stoichiometric melt. A linear correlation is shown to exist between the nonradiative shunt‐path component of the total reciprocal minority‐carrier lifetime and the Ga‐vacancy concentration of these different crystals.Keywords
This publication has 10 references indexed in Scilit:
- Measurement of Free-Carrier Lifetimes in GaP by Photoinduced Modulation of Infrared AbsorptionJournal of Applied Physics, 1971
- Radiative and Nonradiative Recombination at Neutral Oxygen in-Type GaPPhysical Review B, 1971
- 69Ga NMR as a sensitive probe of perfection in gallium phosphide crystalsMaterials Research Bulletin, 1971
- Properties of GaP Single Crystals Grown by Liquid Encapsulated PullingJournal of the Electrochemical Society, 1971
- The Solid Solubility Isotherms of Zn in GaP and GaAsJournal of the Electrochemical Society, 1971
- Luminescence and Minority Carrier Recombination in-Type GaP(Zn,O)Physical Review B, 1970
- HIGH-EFFICIENCY RED-EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION-GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATESApplied Physics Letters, 1970
- GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%Applied Physics Letters, 1969
- P-N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°CApplied Physics Letters, 1967
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965