Electrochromism in tungsten oxyfluoride films made by chemically enhanced dc sputtering
- 17 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (16), 1998-2000
- https://doi.org/10.1063/1.112842
Abstract
Tungsten oxyfluoride films were prepared by reactive dc sputtering in plasmas containing O2+CF4.. The deposition rate was large, particularly when chemical sputtering was promoted by heating the target. The films could show large charge insertion/extraction and high coloration efficiency.Keywords
This publication has 15 references indexed in Scilit:
- Electrochromic oxides: A unified viewSolid State Ionics, 1994
- Electrochromic oxides: a bandstructure approachSolar Energy Materials and Solar Cells, 1994
- A Kinetic Study of Reactive Ion Etching of Tungsten in SF 6 / O 2 RF PlasmasJournal of the Electrochemical Society, 1993
- Tungsten etching mechanisms in low-pressure SF6 plasmaJournal of Applied Physics, 1992
- The Structural Changes of Indium-Tin Oxide and a-WO3 Films by Introducing Water to the Deposition ProcessesJapanese Journal of Applied Physics, 1991
- High rate d.c. reactively sputtered metal-oxy-fluorine dielectric materialsThin Solid Films, 1986
- Antireflection of sputtered heat mirror and transparent conducting coatings by metal-oxy-fluorine filmsSolar Energy Materials, 1985
- Production and properties of high rate sputtered low index transparent dielectric materials based on aluminium-oxy-fluorineSolar Energy Materials, 1985
- Etch products from the reaction on Cl2 with Al(100) and Cu(100) and XeF2 with W(111) and NbJournal of Vacuum Science & Technology B, 1985
- Electrochromic colour centres in amorphous tungsten trioxide thin films☆Solid State Ionics, 1984