Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers

Abstract

We report the determination of the Auger recombination coefficient in strained and unstrained InGaAs/InGaAsP/InP separate‐confinement multiple quantum‐well laser structures. For a temperature of 300 K and a well width of 100 Å, we find an Auger coefficient of C=1.0×10⁻²⁸ cm⁶ s⁻¹, independent of strain and only weakly dependent on temperature. These properties of the Auger coefficient indicate the dominance of phonon‐assisted Auger recombination. Our model calculations based on a six‐band kp theory explain the experimentally found dependency on temperature and strain. The consequences on laser performance are discussed.