Auger recombination effect on threshold current of InGaAsP quantum well lasers
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (6), 932-941
- https://doi.org/10.1109/jqe.1983.1071956
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Band-to-band auger effect in long wavelength multinary III-V alloy semiconductor lasersIEEE Journal of Quantum Electronics, 1982
- Extremely low threshold (AlGa)As graded-index waveguide separate-confinement heterostructure lasers grown by molecular beam epitaxyApplied Physics Letters, 1982
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- Band-to-band Auger effect on the output power saturation in InGaAsP LED'sIEEE Journal of Quantum Electronics, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Calculated spectral dependence of gain in excited GaAsJournal of Applied Physics, 1976
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Recombination in Semiconductors by a Light Hole Auger TransitionPhysica Status Solidi (b), 1967
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959