Defect states in group-V amorphous semiconductors

Abstract

Spin pairing at structural defects is shown to be energetically favourable in pnictide amorphous semiconductors under certain conditions of sp³ hybridisation. The presence of the resulting charged diamagnetic centres can explain very many electronic properties of these materials. Trends to be expected in the series P, As and Sb are discussed and it is concluded that negative effective correlation effects should be most marked in a-P and least marked in a-Sb.