Effect of Uniaxial Stress on Germanium p-n Junctions (II)
- 1 June 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (6), 409-414
- https://doi.org/10.1143/jjap.4.409
Abstract
Uniaxial stress effect on germanium backward diodes has been studied. Stress-induced increase in forward current (I f ) with constant slope of ln I f vs V plots are explained by the model of Wortman et al. Band gap change with stress σ, d E g /dσ, is evaluated as 7.5×10-12 eV cm2/dyn. Stress-induced decrease in tunneling reverse current is interpreted on the basis of model that the effect of stress-induced decrease in tunneling carrier concentration exceeds that of increase in tunneling probability.Keywords
This publication has 6 references indexed in Scilit:
- Effect of Uniaxial Stress on Germanium p-n JunctionsJapanese Journal of Applied Physics, 1965
- Minority Carrier Lifetime in Uniaxially Stressed GermaniumJapanese Journal of Applied Physics, 1965
- Effect of Mechanical Stress on p-n Junction Device CharacteristicsJournal of Applied Physics, 1964
- Anisotropic Stress Effect on the Excess Current in Tunnel DiodesJournal of Applied Physics, 1964
- Resistance of Elastically Deformed Shallow p-n Junctions. IIJournal of Applied Physics, 1963
- Simple Method for Calculating the Tunneling Current of an Esaki DiodePhysical Review B, 1962