Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure

Abstract

Photoluminescence measurement on a GaAlAs quantum well structure subjected to an electric field has been performed. The photoluminescence peak is remarkably shifted to the lower energy side with increasing field. Moreover, the difference in the field-induced polarization effect between heavy and light holes is clearly observed in the photoluminescence spectra. The n=1 electron and heavy hole rtransition spectrum shows a more sensitive response to an electric field than n=1 electron and light hole one. The experimental result is successfully explained in terms of the field-induced carrier separation model.