Thermal Oxidation of Silicon

Abstract

Some experiments concerning the mechanism of the thermal oxidation of silicon, are described. Experiments with a radioactive tracer using the sectioning technique indicate strongly that during the thermal oxidation of silicon the diffusion of oxygen is responsible for the growth of the oxide film. The same technique is applied to the study of the oxidation of copper. A physical picture for the oxidation of metals in general is derived from these series of experiments. Penetration curve for the diffusion of oxygen during the oxidation of silicon is obtained from infrared absorption measurements using the sectioning technique.