Excitation of a microdischarge with a reverse-biased pn junction

Abstract

Excitation of cylindrical microdischarges, 300–360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200–700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of 700 Torr, the wavelength-integrated (300–800 nm) output power—emitted into a solid angle of ${\text{∼6×10}}^{\text{−2}}$ sr—of a 360-μm-diam device is 48±1 μW for an operating current and voltage of 5.7±0.1 mA and 134 V, respectively. This hybrid solid state/gas device represents the demonstration of the generation of a gas discharge by a pn junction and lends itself to the fabrication of large arrays.