Crystal defects in Cd1-xZnxS/GaAs heterostructures prepared by vapour phase chemical transport
- 1 February 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 51 (2), 314-322
- https://doi.org/10.1016/0022-0248(81)90317-1
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Epitaxial growth of single crystal Cd1-xZnxS layers on (111) GaAs substrates using the close-spaced geometryJournal of Crystal Growth, 1978
- Low-resistivity ZnCdS films for use as windows in heterojunction solar cellsApplied Physics Letters, 1978
- Properties of ZnxCd1−xS films prepared by solution spray techniquePhysica Status Solidi (a), 1978
- II-VI solid-solution films by spray pyrolysisJournal of Applied Physics, 1977
- ZnxCd1−xS films for use in heterojunction solar cellsApplied Physics Letters, 1976
- II-VI photovoltaic heterojunctions for solar energy conversionApplied Physics Letters, 1974
- Variations du pourcentage de ZnS dans des solutions solides de ZnxCd1−xS obtenues par pulvérisation cathodique reactiveThin Solid Films, 1973
- Preparation and some properties of ternary CdxZn1−xs polycrystalline thin filmsPhysica Status Solidi (a), 1972
- Structural and Optical Properties of Thin Films of Zn[sub x]Cd[sub (1−x)]SJournal of the Electrochemical Society, 1966
- Chemical Spray Deposition Process for Inorganic FilmsJournal of the Electrochemical Society, 1966