Mechanism of Single-Crystal Growth in InSb using Temperature-Gradient Zone Melting

Abstract

Temperature‐gradient zone melting has been utilized to study growth kinetics in InSb. Indium and lead were used as zone metals. In the temperature region between 410° and 460°C, the rate of zone migration was observed to be dependent on both the thickness of the zone and the orientations of the solids at the bounding interfaces. Interface velocities as large as 2×10⁻⁶ cm/sec were observed during In:InSb growth runs for liquid zones having an average temperature gradient of 30°C/cm. During Pb:InSb growth runs, interface velocities as large as 0.9×10⁻⁶ cm/sec were observed for liquid zones having an average temperature gradient of 60°C/cm. Photomicrographs of growth surfaces obtained after In:InSb growth runs clearly indicated that growth proceeded by a two‐dimensional nucleation mechanism. A best‐fit comparison with theory of the observed dissolution interface velocity as a function of zone thickness also indicates a two‐dimensional nucleation growth mechanism for both the In:InSb and the Pb:InSb systems.