Band alignments in GaInP/GaP/GaAs/GaP/GaInP quantum wells
- 25 August 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (8), 1110-1112
- https://doi.org/10.1063/1.119742
Abstract
Pressure-dependent photoluminescence (PL) in several GaInP(ordered)-GaAs quantum well structures grown by metal organic vapor phase epitaxy is reported. Quantum well emission from GaAs is observed only in structures where thin GaP layers are inserted between the GaAs well and the GaInP barrier. By extrapolating the energies of the various inter and intralayer PL transitions observed under pressures (up to 5.5 GPa) to zero pressure, the different band offsets of the heterostructure have been determined.
Keywords
This publication has 15 references indexed in Scilit:
- Deep emission band at GaInP/GaAs interfaceJournal of Applied Physics, 1997
- Evidence of type-II band alignment at the ordered GaInP to GaAs heterointerfaceJournal of Applied Physics, 1995
- Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wiresJournal of Crystal Growth, 1992
- Interface control in GaAs/GaInP superlattices grown by OMCVDJournal of Crystal Growth, 1992
- Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressureApplied Physics Letters, 1991
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Pressure dependence of GaAs/AlxGa1−xAs quantum-well bound states: The determination of valence-band offsetsJournal of Vacuum Science & Technology B, 1986
- High-pressure studies of GaAs-As quantum wells of widths 26 to 150 ÅPhysical Review B, 1986