Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates
- 1 May 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (5), 1110-1117
- https://doi.org/10.1109/16.78386
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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