Complementary MOS field-effect transistors on high-resistivity silicon substrates
- 31 May 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (5), 377-380
- https://doi.org/10.1016/0038-1101(69)90093-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Theoretical threshold voltages for MOS field effect transistorsSolid-State Electronics, 1968
- Properties of Gold Doped MOS StructuresJournal of the Electrochemical Society, 1967
- Effect of gold on surface properties and leakage current of MOS transistorsSolid-State Electronics, 1967
- Effect of diffused oxygen and gold on surface properties of oxidized siliconSolid-State Electronics, 1967
- A sealed gate IGFETIEEE Transactions on Electron Devices, 1967
- Complementary MOS transistorsSolid-State Electronics, 1966