Local transport and trapping issues in Al2O3 gate oxide structures
- 15 May 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (20), 2886-2888
- https://doi.org/10.1063/1.126506
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- High-resolution depth profiling in ultrathin Al2O3 films on SiApplied Physics Letters, 2000
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000
- Energy-dependent conduction band mass of SiO2 determined by ballistic electron emission microscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Atomic-scale studies of electron transport through MOS structuresApplied Surface Science, 1998
- Ultimate limit for defect generation in ultra-thin silicon dioxideApplied Physics Letters, 1997
- Investigation of existing defects and defect generation in device-grade SiO2 by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- CMOS scaling into the nanometer regimeProceedings of the IEEE, 1997
- Hot electron transport through metal–oxide–semiconductor structures studied by ballistic electron emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Observation of Interface Band Structure by Ballistic-Electron-Emission MicroscopyPhysical Review Letters, 1988
- Effects on interface barrier energies of metal-aluminum oxide-semiconductor (MAS) structures as a function of metal electrode material, charge trapping, and annealingJournal of Applied Physics, 1974