Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy
- 1 February 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (2A), L251
- https://doi.org/10.1143/jjap.27.l251
Abstract
Ethyliodide is shown to be useful as a dopant for growing high-quality n-type ZnSe layers by metalorganic vapor phase epitaxy. Low-resistivity ZnSe single-crystal layers with ρ1019 cm-3 have been grown on (100) GaAs substrate. The grown layers, with an appropriate doping level (n∼1018 cm-3), show a strong blue near-band-edge photoluminescence at room temperature. The emission intensity from the layer is several hundred times stronger than that from the undoped ZnSe.Keywords
This publication has 5 references indexed in Scilit:
- High-Quality ZnSe Film Growth by 0.1-atm MOVPE under the Diethylzinc Diffusion-Limited ConditionJapanese Journal of Applied Physics, 1987
- Characterization of ZnSe grown by molecular-beam epitaxyJournal of Crystal Growth, 1985
- Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting DiodesJapanese Journal of Applied Physics, 1982
- Preparation of low-resistivity n-type ZnSe by organometallic chemical vapor depositionApplied Physics Letters, 1981
- Radiative recombination from GaAs directly excited by electron beamsSolid State Communications, 1964