A dislocation „etch-memory” effect in gallium arsenide
- 16 May 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 17 (1), K1-K4
- https://doi.org/10.1002/pssa.2210170141
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Some observations on the dislocation etching of GaAs1-χPχ epitaxial layersJournal of Crystal Growth, 1971
- Etching Studies of Impurity Precipitates in Pulled GaP CrystalsJournal of the Electrochemical Society, 1971
- Dislocations and Precipitates in GaAs Injection LasersJournal of Applied Physics, 1966
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965
- Etch Pits in Gallium ArsenideJournal of Applied Physics, 1960
- Studies of Individual Dislocations in Crystals by X-Ray Diffraction MicroradiographyJournal of Applied Physics, 1959