Silicon oxidation studies: A revised model for thermal oxidation
- 1 September 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (9), 5416-5420
- https://doi.org/10.1063/1.332722
Abstract
A number of recent experimental silicon oxidation studies has suggested that the present form of the linear-parabolic oxidation model is inadequate in explaining the results. However, the best available oxidation data are linear-parabolic in shape. The present study relieves this dilemma by revising the linear-parabolic model. The revisions are essentially twofold: a new transport flux, viz., transport in micropores is invoked and the viscoelastic properties of SiO2 are utilized. A revised linear-parabolic model is obtained which better explains high and low temperature oxidation behavior, the formation higher density SiO2, and the initial oxidation regime.Keywords
This publication has 21 references indexed in Scilit:
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Silicon Oxidation Studies: Measurement of the Diffusion of Oxidant in SiO2 FilmsJournal of the Electrochemical Society, 1982
- Network oxygen exchange during water diffusion in SiO2Journal of Applied Physics, 1981
- Direct Evidence for 1 nm Pores in “Dry”Thermal SiO2 from High Resolution Transmission Electron MicroscopyJournal of the Electrochemical Society, 1980
- On the Kinetics of the Thermal Oxidation of Silicon: II . Some Theoretical EvaluationsJournal of the Electrochemical Society, 1980
- Silicon Oxidation Studies: Some Aspects of the Initial Oxidation RegimeJournal of the Electrochemical Society, 1978
- Silicon Oxidation Studies: Analysis of SiO2 Film Growth DataJournal of the Electrochemical Society, 1976
- Thermal Oxidation of Silicon: In Situ Measurement of the Growth Rate Using EllipsometryJournal of the Electrochemical Society, 1975
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Permeation of Gaseous Oxygen through Vitreous SilicaNature, 1961