Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
- 1 September 2006
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 24 (5), 2205-2208
- https://doi.org/10.1116/1.2244540
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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