Surface study of thin epitaxial CoSi2/Si(100) layers by scanning tunneling microscopy and reflection high-energy electron diffraction
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 271 (3), 355-375
- https://doi.org/10.1016/0039-6028(92)90900-q
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- A scanning tunneling microscope adapted to a 3-in. molecular-beam-epitaxy systemReview of Scientific Instruments, 1992
- Strain-induced (2 × 1) reconstruction on epitaxial CoSi2/Si(111) observed by scanning tunneling microscopy: structure model and electrical propertiesSurface Science, 1991
- Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopyApplied Physics Letters, 1991
- Control of misoriented grains and pinholes in CoSi2 grown on Si(001)Journal of Crystal Growth, 1991
- Epitaxial orientation and morphology of thin CoSi2 films grown on Si(100): Effects of growth parametersJournal of Vacuum Science & Technology A, 1989
- Electronic structure and properties ofPhysical Review B, 1988
- Surface structure of thin epitaxialgrown on Si(111)Physical Review B, 1988
- Growth and Properties of Epitaxial Silicides on Si(III)Physica Scripta, 1987
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Oxygen interaction with CoSi(100) and CoSi2(100) surfacesSurface Science, 1982